Defects in carbon allotropes studied by positron annihilation

摘要：

Slow positron beam technique has been employed to study the defects of graphite, nanophase C, as well as the structural changes in un-doped, B-doped and S-doped diamond films with annealing temperatures. The results show that the concentration of defects in nanophase C is higher than that in graphite. The vacancy concentration in the S-doped diamond film is higher than that in un-doped one. The addition of small amount of B atoms leads to the decrease of the vacancy concentration in the film. The vacancy concentration in un-doped diamond film would decrease after annealing at temperature below 600℃, while vacancy concentration will increase after annealing at temperatures above 900℃. The vacancy concentration in the 40Ω cm B-doped diamond film decreases at annealing temperatures higher than 200℃.

关键词： Diamond films graphite nanophase C defect positron annihilation

作者: Huang Yu-Yang Chen Zhen-Ying Wei Ya-Qin Li Yu-Xia Deng Wen

作者单位: Department of Physics,Guangxi University,Nanning 530004,P.R.China

会议类型: 国际会议

会议名称: 第九届国际正电子与正电子素国际会议(9th International Workshop on Positron and Positronium Chemistry)(PPC–9)

会议地点: 武汉

会议语种:英文

页码: 149-151

在线出版日期: 2008-05-11（万方平台首次上网日期，不代表论文的发表时间）