Coplanar Waveguide with Elevated Center Strip Conductor Based on HR-Si Substrate

摘要：

In this paper, an elevated CPW based on high-resistivity silicon is presented. The center strip conductor is elevated on a silicon dioxide layer which can be easily fabricated by thermal oxidation. This extra silicon dioxide layer under the center strip conductor weakens the magnetic-field, which could be validated by the HFSS simulation. Compared with the conven-tional CPW with the center strip and ground planes on the same plane, the elevated CPWs insertion loss can be decreased. The simulated and measured results are in good agreement. And the process flow is compatible with the mainstreamed CMOS technology.

作者: Xiuzhi Wen Yanling Shi Jing Liu Fuquan Cao Yanfang Ding Xi Li Hao Huang Hongbo Ye Linyan Xue

作者单位: Department of E.E.,East China Normal University,China State;Key Laboratories of Transducer Technolog Department of E.E.,East China Normal University,China Shanghai IC Research and Development Center,China

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2008-03-24（万方平台首次上网日期，不代表论文的发表时间）