Interaction between Magnetoresistor and Magnetotransistor in the Two-dimensional Folded Vertical Hall Devices
A 2-D folded Hall device, fabricated in a standard 0.35μm CMOS process, is proposed. By simultaneously altering the bias currents and the polarities of p+-implant and n+-implant contacts, the experimental results exhibit that the bulk parasitic magnetotransistor presents either the best magnetosensitivity or the highest induced Hall voltage at the supply bias current 20 mA. A further analyses of the interactions between the Hall device, the lateral mag-netotransistor and the vertical parasitic magnetotransistor show that the dominant mechanism evoked by the magnetic induction is the hybrid effect which mixed with the Hall effect and the filament magneto-sensitive effect. By the way, the maximum supply-voltage-related sensitivity of the hybrid effect of vertical magnetoresistor and bulk magnetotransistor is about 68 and 48 times larger than that of the Hall device and the lateral parasitic magnetotransistor, respectively. Note that the maximum induced Hall voltage of the hybrid effect of vertical magnetoresistor and bulk magnetotransistor magnetotransistor is also greater than that of the Hall device and the lateral parasitic magnetotransistor by 136 and 9 times, while the amplification function of the lateral parasitic magnrtotransistor appears at the higher supply bias current. The largest supply-current-related sensitivity is presented with 3.838 (V/A*T).
Guo-Ming Sung Chih-Ping Yu
Department of Electrical Engineering,National Taipei University of Technology 1,Sec.3,Chung-Hsiao E.Rd.,Taipei 106,Taiwan,R.O.C.
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-4
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）