Device Fatigue-fracture Caused by High Current Density
The electrons-migration under high current density can cause the distortion of molecules. The molecules deformation has two possible stable configurations when the electrons-migration is not symmetric in space. Geometrically, the non-symmetric electrons-migration be-haves as a local rotation. When the electrons-migration is incompressible flow feature, the con-ductor may suffer fatigue effects, this is the normal case. However, when the electrons-migration is highly non-symmetric, only one stable configuration is possible, the conductor will produce fracture. The condition of fracture is described by an intrinsic parameter of critical local rotation angular, which is related with the yield stress of conductor material. This research gives the cur-rent density condition for the fatigue-fracture deformation. It shows that to increase the ability to against the fatigue-fracture deformation, one can increase the critical angular of material (that is to say, increase the yield stress of material while at the same time reduce the elastic modulus). For fractured conductors, the current density will accelerate the fatigue-fracture process in the fractured position of conductor as it forms a high charge density there when the reference charge density is determined by initial or boundary condition.
Jianhua Xiao
Henan Polytechnic University,Jiaozuo 454000,Henan,China
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-6
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）