Enhancement of the Electronic Confinement Improves the Mobility in p-n-p Delta-doped Quantum Wells in Si
The electronic structure and mobility trends in a n-type delta-doped quantum well in Si, matched between p-type delta-doped barriers of the same material, is presented. The distance between the n-type well and p-type barriers is varied from 50(A) to 500(A); and also the impurity density from 5×1012 cm-2 to 5×1013 cm-2, for both, donors and acceptors. An increase in the mobility by a factor of 1.6 at interwell distance of 50(A) with donor and acceptor concentrations of 5×1012 cm-2 and 5×1013 cm-2 compared with a single delta-doped well without p-type barriers is found. This improvement in mobility could be attributed to a better confinement of carriers, which favors excited levels with nodes in the donor plane. This trade-off between carrier concentration and mobility could be exploited in high-speed, high-power and high-frequency applications.
A.David Ariza-Flores I.Rodriguez-Vargas
Facultad de Ciencias,Universidad Autónoma del Estado de Morelos Av.Universidad 1001,Col.Chamilpa,622 Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo l
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-4
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）