Electron Subband Structure and Mobility Trends in p-n Delta-doped Quantum Wells in Si
We present the electronic spectrum of a n-type delta-doped quantum well in Si coupled to a p-type delta-doped barrier within the envelope function effective mass approximation. We applied the Thomas-Fermi approximation to derive an analytical expression for the confining potential, and thus, we obtain the electronic structure in a simple manner. We analyzed the electron subband structure varying the distance between the doping planes (l) as well as the impurity density in them (n2D; p2D). We also study the mobility trends through an empirical formula that is based on the electron levels, the electron wave functions and the Fermi level. We find a monotonic decrease in the mobility as the p-type barrier moves away from the n-type well, and optimum parameters, l=70(A) and n2D=5×1012 cm-2 and p2D=5×1013 cm-2, for maximum mobility.
A.David Ariza-Flores I.Rodriguez-Vargas
Facultad de Ciencias,Universidad Autónoma del Estado de Morelos Av.Universidad 1001,Col.Chamilpa,622 Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo l
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-4
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）