Stark Effect in p-type Delta-doped Quantum Wells

摘要：

In this work tight binding calculations in Be δ-doped GaAs quantum wells with an electric field applied along the 001 growth direction are presented. The Stark shifts of the hole electronic states for different impurity concentrations and electric field strengths are calculated. The δ-potential is treated as an external potential following the approach described earlier. A comparison with Stark effects in rectangular and graded-gap quantum wells is made.

作者: A.M.Miteva S.J.Vlaev V.Donchev

作者单位: Space Research Institute,Bulgarian Academy of Sciences,Moskovska Str.6,Sofia 1000,Bulgaria Unidad Academica de Fisica,Universidad Autonoma de Zacatecas Calzada Solidaridad Esquina con Paseo l Department of Condensed Matter Physics,Faculty of Physics,Sofia University blvd.James Bourchier 5,11

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)

会议地点: 杭州

会议语种:英文

页码: 1-4

在线出版日期: 2008-03-24（万方平台首次上网日期，不代表论文的发表时间）