Miniband Structure Formation of p-type Delta-doped Superlattices in GaAs
We present the electronic structure of finite p-type delta-doped superlattices in GaAs. We use the first neighbors sp3s* tight-binding approximation including spin for the miniband structure analysis. The calculation is based on analytical expression for the Hartree potential of the inhomogeneous part, previously obtained within the Thomas-Fermi (TF) ap-proximation. This potential is considered as an external potential in the computations, so, it is added to the diagonal terms of the tight-binding Hamiltonian. We give a detail description of the delta-doped superlattices, this is, we study the miniband formation as a function of the impurity density (n2D) and the superlattice period (d), obtaining the regions of superlattice, multiple well and isolate well behavior. We also compare our results with the theoretical and experimental data available, obtaining a reasonable agreement.
I.Rodriguez-Vargas A.del Rio de Santiago J.Madrigal-Melchor S.J.Vlaev
Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo la Bufa S/N,98060 Zacatecas,ZAC.,Mexico
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-5
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）