Quasi-bound Electronic States in Multiple Delta-doped Quantum Wells

摘要：

Multiple delta-doped quantum wells of n-type (Si doped GaAs) and p-type (Be doped GaAs) are studied theoretically looking for quasi-bound electron and hole states. The existence of these states and their strong energy and spatial localizations are demonstrated. The line-width and the mean life time are calculated. The FWHM is less than 10-11 eV (10-9 eV) and the corresponding mean life time is greater than 10-5 s (10-7 s) for n-(p-) type wells respectively. A strong spatial localization is observed in both cases.

作者: I.Rodriguez-Vargas A.del Rio de Santiago S.J.Vlaev

作者单位: Unidad Académica de Física,Universidad Autónoma de Zacatecas,Calzada Solidaridad Esquina con Paseo la Bufa S/N,98060 Zacatecas,ZAC.,Mexico

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)

会议地点: 杭州

会议语种:英文

页码: 1-3

在线出版日期: 2008-03-24（万方平台首次上网日期，不代表论文的发表时间）