The Electrostatic Potential Associated to Interface Phonon Modes in Nitride Single Heterostructures
The electrostatic potential associated to the interface oscillation modes in nitridebased heterostructure is calculated with the use of a complete phenomenological electroelastic continuum approach for the long wave optical oscillations, and the Surface Green Function Matching technique. The crystalline symmetries of zincblende and -isotropically averaged-wurtzite are both considered in the sets of input bulk frequencies and dielectric constants.
M.E.Mora-Ramos R.Pérez-Alvarez V.R.Velasco
Facultad de Ciencias,Universidad Autonoma del Estado de Morelos,Mexico Instituto de Ciencia de Materiales de Madrid,CSIC,Spain
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-4
2008-03-24(万方平台首次上网日期,不代表论文的发表时间)