Transport Properties of Delta Doped Field Effect Transistor
The first calculation of mobility and conductivity between source and drain as function of gate voltage in a δ-doped Field Effect Transistor is presented. The calculation was performed with a model for the δ-FET that was shown in 1. The mobility was calculated using a phenomenological expression that was presented in 2. That expression does not have empirical form, neither empirical parameter. For the first time a phenomenological expression of the conductivity is presented, which is derived from the mobility expression. The conductivity shows three different regions: a parabolic region and two linear regions. The parabolic region represents the region at which the conduction channel begins to close. On the other hand, the mobility shows a more different behavior. In the mobility there are four regions. These regions correspond to the disappearance of the different conduction channels that form the subbands of the delta-doped quantum well. The different behavior between mobility and conductivity relies on the depletion of the delta-doped quantum well as the gate potential grows.
O.Oubram L.M.Gaggero Sager
Facultad de Ciencias,Universidad Autónoma del Estado de Morelos Av.Universidad 1001,Col.Chamilpa,CP 62209,Cuernavaca,Morelos,Mexico
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-4
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）