Internal Mobility Edge in Doped Graphene: Frustration in a Renormalized Lattice
We show that an internal localization mobility edge can appear around the Fermi energy in graphene by introducing impurities in the split-band regimen, or by producing vacancies in the lattice. The edge appears at the center of the spectrum and not at the band edges, in contrast with the usual picture of localization. Such result is explained by showing that the bipartite nature of lattice allows to renormalize the Hamiltonian, and the internal edge appears because of frustration effects in the renormalized lattice. The size in energy of the spectral region with localized states is similar in value to that observed in narrow gap semiconductors.
Gerardo G.Naumis
Departamento de Física-Química,Instituto de Física Universidad Nacional Autonoma de México (UNAM) Apartado Postal 20-364,Mexico DF 01000,Mexico
国际会议
Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)
杭州
英文
1-5
2008-03-24（万方平台首次上网日期，不代表论文的发表时间）