会议专题

Temperature Effects Induced a Radically Different Behavior on the Transport Properties of Si Delta-doped GaAs Quantum Wells

The electronic structure of a delta-doped quantum well of Si in GaAs matrix is studied for different temperatures. The calculation is carried out self-consistently in the frame-work of the Hartree approximation. The energy levels and the mobility trends are reported for various impurity densities. The apparent contradictory temperature dependence of the mobility reported between Zheng and Gurtovoi et al. 1, 2 can be explain by means of the temperature variation of the electronic structure. Values of 1.9 and 0.9 are obtained for the ratio of the mo-bility at 300K and 77K corresponding to impurity densities of 5×1012 cm-2 and 3×1012 cm-2, respectively, in excellent agreement with the experimental ones, 2.1 and 0.85.

L.M.Gaggero-Sager I.Rodriguez-Vargas

Universidad Autónoma del Estado de Morelos,Ave.Universidad 1001,62209 Cuernavaca,México Unidad Académica de Física,Universidad Auténoma de Zacatecas Calzada Solidaridad Esquina con Paseo l

国际会议

Progress in Electromagnetics Research Symposium 2008(2008年电磁学研究新进展学术研讨会)(PIERS 2008)

杭州

英文

1-4

2008-03-24(万方平台首次上网日期,不代表论文的发表时间)