A 0.75V CMOS Low-noise Amplifier for Ultra Wide-band Wireless Receiver
An ultra-wideband (UWB) CMOS low-noise amplifier(LNA) topology that combines a common-gate stage for input wideband matching with a shunt-peaked folded-cascode configuration for wideband amplifying stage is presented in this paper. The proposed UWB LNA achieves simulated power gain>10 dB from 3.3 to 10.1 GHz with only 0.75V supply using 0.18 1m CMOS process. Its broadband matching is better than-10 dB for S11 and S22 from 3.1 to 10.6 GHz, and an average noise figure is about 4 dB, while consuming 11.5mw with output buffer amplifier.
Hui-I. Wu Zi Hao Hsiung Christina F. Jou
Microwave and Millimeter wave Laboratory, Institute of Communication Engineering Chiao Tung University, Hsinchu, Taiwan, China
国际会议
Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)
北京
英文
205-208
2007-03-26（万方平台首次上网日期，不代表论文的发表时间）