effectron Spectrum of Single n-type δ-doped Quantum Wells in Si

摘要：

We present the effectron subband levels of single n-type δ-doped quantum wells in Si. The Thomas-Fermi and effective mass theories were used for the description of the conduction band bending and the subband level calculations, respectively. The energy levels, potential depth and subband occupancies are analyzed as a function of the impurity density. The possible trends of the transport properties based on the subband occupancy results are given. Our results are in good agreement with available experimental reports.

作者: I. Rodriguez-Vargas L. M. Gaggero-Sager V. V. Grimalsky M. E. Mora-Ramos R. Pérez-Alvarez

作者单位: Facultad de Ciencias, Universidad Autónoma del Estado de Morelos Av. Universidad 1001, Col. Chamilpa 62210, Cuernavaca, Morelos, México

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)

会议地点: 北京

会议语种:英文

页码: 248-251

在线出版日期: 2007-03-26（万方平台首次上网日期，不代表论文的发表时间）