Low-temperature Crystallization of Lead Zirconate Titanate Thin Films Using 2.45GHz Microwaves

摘要：

Lead zirconate titanate (PZT) thin films of thickness 420nm were deposited on Pt/Ti/SiO2/Si substrate using a spin coating sol-gel precursor solution, and then annealed using 2.45 GHz microwaves at a temperature of 450℃ for 30 min. The film has a high perovskite content and high crystallinity with a full width at half maximum of 0.35°. Well-saturated ferroeffectric properties were obtained with a remanent polarization of 46.86 μC/cm2 and coercive field of 86.25 kV/cm. The film also exhibited excellent dieffectric properties with a dieffectric constant of 1140 and a dissipation factor of 0.03. These properties are superior to those obtained by conventional annealing at a temperature of 700℃ for 30 min.

作者: T. H. Chang Ankam Bhaskar H. Y. Chang S. Y. Cheng

作者单位: Department of Physics, Tsing Hua University, Hsinchu, Taiwan, China Material and Chemical Research Laboratories, Industrial Technology Research Institute Hsinchu, Taiwa

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)

会议地点: 北京

会议语种:英文

页码: 603-604

在线出版日期: 2007-03-26（万方平台首次上网日期，不代表论文的发表时间）