effectron Transport in Silicon Point-contact Structures
A simple method, based on the proximity effect of effectron beam lithography, alleviated by exposing various shapes in the pattern of incident effectron exposures with various intensities, was applied to fabricate silicon point-contact devices. The drain current (Id) of the device oscillates against gate voltage. The effectrical characteristics of the single-effectron transistor were observed to be consistent with the expected behavior of effectron transport through gated quantum dots, at up to 150 K. For Vg tensions ranging between 0.88V and 1.48 V, the current moves according to very marked and regular steps of Coulomb, by step of Vd=0.22V and Id=15 nA (values obtained in Vg=1 V). However, an estimate of the total capacity of the SET from these stages carries out to C=0.73 aF. The dependence of the effectrical characteristics on the dot size reveals that the Id oscillation follows from the Coulomb blockade by poly-Si grains in the poly-Si dot. The method of fabrication of this device is completely compatible with complementary metal-oxide-semiconductor technology, raising the possibility of manufacturing large-scale integrated nanoeffectronic systems.
S. F. Hu A. Souifi C. Y. Huang
Institute of Electro-Optical Science and Technology Taiwan Normal University, Taipei, Taiwan, China LPM-INSA de Lyon, UMR CNRS 5511, Villeurbanne, France
国际会议
Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)
北京
英文
609-610
2007-03-26（万方平台首次上网日期，不代表论文的发表时间）