effectronic Structure as a Function of Temperature for Si δ-doped Quantum Wells in GaAs

摘要：

The effectronic structure of a delta-doped quantum well of Si in GaAs matrix is studied at different temperatures. The calculation is carried out self-consistently in the framework of the Hartree approximation. The energy levels and the occupation numbers of the discrete states are reported.

作者: L. M. Gaggero-Sager N. Moreno-Martinez I. Rodriguez-Vargas R. Pérez-Alvarez V. V. Grimalsky M. E. Mora-Ramos

作者单位: Facultad de Ciencias, Universidad Autónoma del Estado de Morelos Av. Universidad 1001, Col. Chamilpa 62210 Cuernavaca, Morelos, México

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)

会议地点: 北京

会议语种:英文

页码: 760-763

在线出版日期: 2007-03-26（万方平台首次上网日期，不代表论文的发表时间）