p-n-p δ-doped Quantum Wells in GaAs
We present the effectronic structure and relative mobility of a n-type δ-doped quantum well in GaAs surrounded with potential barriers created by p-type δ-doping. The Thomas-Fermi and the effective mass theory has been applied to obtain an analytical expression for the confining potential, and the effectron spectrum, respectively. The effectron energy levels and the relative mobility have been analyzed as a function of the impurity density in the nand ptype planes as well as the distance between them. We have paid special attention to the relative mobility, obtaining an increase in this by a factor of 2 with respect to a single δ-doped well without barriers. So, the p-n-p δ system can be interesting for applications in high speed and high power devices.
L. M. Gaggero-Sager I. Rodriguez-Vargas
Facultad de Ciencias, Universidad Autónoma del Estado de Morelos Av. Universidad 1001, Col. Chamilpa 62210, Cuernavaca, Morelos, México.
国际会议
Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)
北京
英文
764-767
2007-03-26（万方平台首次上网日期，不代表论文的发表时间）