Effects of Isolation-layer on Luminance Efficiency of Organic Light-emitting Diodes
This study deposited SiO2 of varying thickness by PECVD or coated photo-resist of varying thickness at the edge of patterned OLED anode and between the patterned anode and the organic layer as isolation-layer to improve the current leak of OLED. Current leak would cause the loss of charges around the emitting zone, which adversely a?ects the recombination of effectrons and holes in the emitting zone and results in poorer luminance efficiency. The study find that as SiO2 thickness increased, leakage current was significantly reduced. When SiO2 thickness increased from 0nm to 250 nm, the luminance efficiency of device rose from 1.7 cd/A to 3.4 cd/A at 150mA/cm2. Lastly the study examined the effect of photoresist thickness on reducing the leaking current and finds that at 2250 nm, the luminance efficiency was enhanced further to 4.5 cd/A at 150mA/cm2.
Chang-Han Chung To-Sing Li Fuh-Shyang Juang Day-Shan Liu
Institute of Electrical-Engineering, Kun-Shan University Yong Kang, Tainan 710, Taiwan, China Institute of Electro-Optical and Materials Science, Formosa UniversityHuwei, Yunlin 63208, Taiwan, C
国际会议
Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)
北京
英文
1188-1190
2007-03-26（万方平台首次上网日期，不代表论文的发表时间）