High-quality Ultra-uniform Quantum Dot (QD) Fabrication Techniques for High-performance Terahertz Quantum Cascaded Laser
A high-quality quantum dot (QD) fabrication technique with precisely-controllable physical (size, position, and density) and effectronics properties (energy levels, emission spectrum) is proposed. The fabrication technology employs in situ or ex situ etching of after-growing multi-quantum-well QCL structures followed by the regrowth of properly p-doped AlGaAs large band-gap materials. The heterostructure formed at the sidewall interface together with build-in effectric field allows us to achieve nanometer-scale carrier confinement in the etched QDs and thus reduces the non-radiative recombination rate. In this paper, the fabrication method for highquality QDs is presented. The photoluminescence (PL) enhancement by the nanometer-scale carrier confinement technology is calculated. Expected performance enhancement is simulated.
Xuejun Lu
Department of Electrical and Computer Engineering, University of Massachusetts Lowell One University Avenue, Lowell, MA 01854, USA
国际会议
Progress in Electromagnetics Research Symposium 2007(2007年电磁学研究新进展学术研讨会)(PIERS 2007)
北京
英文
2103-2108
2007-03-26（万方平台首次上网日期，不代表论文的发表时间）