Intrinsic Optical Anisotropy in Zinc-blende Semiconductor Quantum Wells

摘要：

An analytical(hke)-Oriented k·p method is developed in this paper and applied to calculate the optical transition strength of zinc-blende semiconductor quantum wells. The optical matrix elements and the hole effective masses are presented in analytical forms. Calculations are performed for In0.53Ga0.47As/InP quantum wells oriented in arbitrary growth directions. The in-plane polarization angle is adopted as a key parameter in the calculations performed to explore the variation of the optical transition strength in the well plane. The theoretical results indicate that the largest optical anisotropy of the optical matrix elements in the well plane appears in the (110) surface.

作者: Chun-Nan Chen Wei-Chih Chien Kao-Feng Yarn Sheng-Hsiung Chang Meei-Ling Hung

作者单位: Far-East College,Taiwan

会议类型: 国际会议

会议名称: Progress in Electromagnetics Research Symposium 2005(2005年电磁学研究新进展学术研讨会)(PIERS 2005)

会议地点: 杭州

会议语种:英文

页码: 223-226

在线出版日期: 2005-08-22（万方平台首次上网日期，不代表论文的发表时间）