A High-Power Ka-Band Power Amplifier Design Based on GaAs P-HEMT Technology for VSAT ODU Applications

摘要：

In this paper, a Ka-band GaAs pseudomorphic high electron mobility transistor (P-HEMT) monolithic microwave integrated circuit (MMIC) power amplifier for very small aperture terminal (VSAT) outdoor unit (ODU) transmitter applications is demonstrated. This three-stage power amplifier is designed to fully match the 50 Ω input and output impedances. With 6 V and -0.75 V DC bias, a small signal gain of 11 dB, a 1 dB compression power (P1dB) of 29.5 dBm, a power added efficiency (PAE) of 31％, and a better than -15 dB input return loss are achieved from 28.5 to 31.5 GHz. The proposed Ka-band power amplifier is designed within a die size of about 3.344 ×1.964 mm2 on GaAs substrate.

作者: De-Zhong Li Cong Wang Wen-Cheng Huang Ram Krishna Maharjan Sung-Jin Cho Bhanu Shrestha Gear Inpyo Kyung Nam-Young Kim

作者单位: RFIC Center, Kwangwoon University, Seoul, 139-701, Korea

会议类型: 国际会议

会议名称: 2009 3rd IEEE International Symposium on Microwave,Antenna,Progagation and EMC Technologies for Wireless Communications(第三届微波、天线、电波传播和EMC技术国际会议

会议地点: 北京

会议语种:英文

页码: 20-23

在线出版日期: 2009-10-27（万方平台首次上网日期，不代表论文的发表时间）