A Wideband Circuit Model of On-Chip Spiral Inductor in 0.13μm CMOS process
In this paper, a simple wideband circuit model for on-chip spiral inductors is presented. The model shows excellent agreement with measured data mostly within 4.91％ across a variety of inductor geometries up to 20 GHz. The proposed model has been verified with measured results of inductors fabricated in 0.13μm CMOS process. The inductors have two dimensions: turn and inner radius. The new model accurately captures series resistance and inductance over a wide frequency range, even beyond the self-resonant frequency.
on-chip spiral inductors circuit model wideband
Liu lintao Yu mingyan Wang jinxiang Jiang ming
Microelectronic Center Harbin Institute of Technology Harbin, China
国际会议
北京
英文
143-146
2009-10-27（万方平台首次上网日期，不代表论文的发表时间）