InGaAs/GaAs HBT Based MMIC Differential VCO for S-Band Satellite Communication Applications
This paper presents that MMIC differential voltage controlled oscillator (DVCO) is designed and fabricated with considerably low phase noise. A fully integrated VCO in S-band is applied on InGaAs/GaAs heterojunction bipolar transistor (HBT) technology. The MMIC DVCO has attractive output power and lower phase-noise performance, while drawing lower current than that of the BJT or MOS family differential VCO. In order to generate negative resistance at S-band microwave frequency, a cross-coupled capacitive feedback topology between differential transistors is used. The phase noise is -118.85 dBc/Hz at 1 MHz offset and -96.7 dBc/Hz at 100 KHz offset at 3.583 GHz and the peak output power swings between 3.23 dBm to 3.65 dBm. The frequency tuning range is about 143 MHz. The standard IF frequency for satellite communications is either 70 MHz or 140 MHz. Therefore, the VCO output frequency can easily be tuned at 140 MHz frequency for the S-band satellite communications. The designed MMIC differential VCO is fabricated within the die size of 900 × 850 μm2 on the GaAs substrate basement.
Differential Voltage Controlled Oscillator (DVCO) Differential Topology MMIC DVCO InGaAs/GaAs HBT Technology S-band Satellite Communication
Ram Krishna Maharjan Nam-Young Kim
RFIC Lab, Department of Electronic Engineering Kwangwoon University, Seoul, South Korea
国际会议
北京
英文
507-510
2009-10-27（万方平台首次上网日期，不代表论文的发表时间）