Triggering GaAs Photoconductive Switches with 1064nm Laser

摘要：

The GaAs photoconductive switch is triggered by 1064nm laser pulses with the optical energy of 0.05mJ and 0.3mJ respectively, under a bias 500V, the electrode gap of the switch is 3mm. The output electrical pulse waveforms show that the photoconductivity can occur in semi-insulating GaAs photoconductive switch at 1064nm. Some possible absorption mechanisms have been discussed for GaAs triggered by 1064nm, and the two step photoabsorption with EL2 defect is suggested as the primary process for the photoconductivity.

关键词： photoconductive switch GaAs 1064nm EL2

作者: Haijuan Cui Chengli Ruan Hongchun Yang

作者单位: Institute of Applied Physics University of Electronic Science and Technology of China Chengdu, China

会议类型: 国际会议

会议名称: 2009 3rd IEEE International Symposium on Microwave,Antenna,Progagation and EMC Technologies for Wireless Communications(第三届微波、天线、电波传播和EMC技术国际会议

会议地点: 北京

会议语种:英文

页码: 834-836

在线出版日期: 2009-10-27（万方平台首次上网日期，不代表论文的发表时间）