A Wideband CMOS Low-Noise Amplifier for 3-5 GHz UWB Systems
A complete modeling methodology for fully integrated low noise amplifier (LNA) for ultra-wideband (UWB) systems employing an input three-section band-pass Chebyshev filter is discussed in this paper. This input network has lower complexity and good reflected coefficient from 3GHz to 5GHz. An output matching source-follower buffer is designed specially to improve the power gain of the amplifier. The LNA is designed in a 0.18μm RF CMOS technology. The result of simulation shows that a gain from 8.6 to 9.5 dB， the minimum noise figure (NF) is 2.7dB and with good input and output matching from 3GHz to 5GHz. The total power consumption is 15 mW under a 1.8V supply. The gain ripple is less than 1dB in every band group.
low noise amplifier(LNA) Chebyshev filter CMOS noise figure(NF) ultra-wideband(UWB)
Ji-hai Duan Xiao-ting Han Sheng Li
School of Information &Communication Guilin University of Electronic Technology Guilin, China
国际会议
北京
英文
1022-1025
2009-10-27（万方平台首次上网日期，不代表论文的发表时间）