Design and Simulation of a Wideband Power Amplifier from 600MHz to 1000MHz

摘要：

This paper presents a 15W power amplifier’s design at UHF band using lateral diffused metal-oxide semi-conductor (LDMOS) transistor MRF9030LR1. In the design, we use Load-Pull simulation method and parameter sweep mode in order to study the linearity characteristics in working band and the impact of DC bias changing. The P1dB compression characteristic figure shows that the minimum compression point is at 770MHz, and it also demonstrates that the linearity performance at 1000MHz are greatly influenced by non-ideal capacitor. On the other hand, with DC bias increasing, the P1dB compression point increases little at the beginning but has a great drop quickly. Based on the analysis result, we find out the key on quality control in production and therefore improve the production efficiency.

关键词： LDMOS P1dB compression point linearity DC bias quality control

作者: Derui Fan Yufen Deng Zhuang Li

作者单位: Nanjing Telecommunication Institute Nanjing, China

会议类型: 国际会议

会议名称: 2009 3rd IEEE International Symposium on Microwave,Antenna,Progagation and EMC Technologies for Wireless Communications(第三届微波、天线、电波传播和EMC技术国际会议

会议地点: 北京

会议语种:英文

页码: 1029-1031

在线出版日期: 2009-10-27（万方平台首次上网日期，不代表论文的发表时间）