A 3.1-5GHz High and Flat Gain UWB LNA
A 3.1-5 GHz Ultra Wideband (UWB) CMOS low noise amplifier (LNA) with high gain and noise cancellation is presented. The LNA is composed of two stages–an input common-gate stage with a resonant load at 3.1GHz, driving a common source stage with a resonant load of 5GHz. Noise cancellation is achieved through the forward feedback technique, and an output buffer has been added for test purposes. The amplifier has been designed in a 0.65 nm CMOS process, and has a power gain of 21 dB that varies less than 0.5dB across the 3.1-5 GHz band with a noise figure of less than 5.4 dB. The LNA consumes 8 mA of current from 1 V power supply and occupies 0.24 mm2 of chip area.
Wei Wu Manohar Nagaraju Cameron T.Charles Xiaoya Fan
School of Computer, Northwestern Polytechnical University, Xian, Shaanxi 710072, P.R.China ECE Depa ECE Department, University of Utah, Salt Lake City, UT 84102, U.S.A School of Computer, Northwestern Polytechnical University, Xian, Shaanxi 710072, P.R.China
国际会议
北京
英文
1162-1165
2009-10-27(万方平台首次上网日期,不代表论文的发表时间)