Study on Crystallization Process of Al(Ce) Induced Si Films

摘要：

Based on aluminum-induced crystallization method, Al-Si and Al(Ce)-Si films were deposited by DC magnetron sputtering using the pure Al, pure Si and Al-Ce(Ce:12wt％) targets. Crystallization and growth process of Al-Si and Al(Ce)-Si films were analyzed by X-ray diffraction(XRD) method after annealing at different temperatures. Combining with established grown model of Si films, influence of Al and lanthanon Ce to the anneal crystalline process of Si films were investigated. The results show that the growth trend of Si atoms along (111) crystal plane was improved with Ce doped. The crystal size of Si reduced significantly after annealing at 500℃ in Al(Ce) induced crystallization compared with Al induced Si film, and the main reason is that aluminum particles which disperse into Si film reduce in size but increase in density.

关键词： lanthanon Ce Si films annealing crystallization process

作者: LI Hong-tao JIANG Bai-ling YANG Bo MIAO Qi-lin CAI Min-li CHEN Xue

作者单位: School of Material science and Engineering,Xian University of Technology,Xian,China

会议类型: 国际会议

会议名称: The Fourth Asian Conference on Heat Treatment and Surface Engineering(第四届亚洲热处理及表面工程大会)

会议地点: 北京

会议语种:英文

页码: 494-497

在线出版日期: 2009-10-27（万方平台首次上网日期，不代表论文的发表时间）