Development of Nano-Scale Bending Method Using Focused Ion Beam
Single crystalline silicon rod with a diameter of less than 300nm and diamond like carbon (DLC) rod with a diameter of about 300nm which is fabricated using deposition function of the focused ion beam (FIB) equipment were used for specimens. Gallium ion beam was irradiated to the specimen perpendicular to the longitudinal direction of the rods. The acceleration voltage of focused ion beam equipment was 30keV, the beam current was 1pA or 10pA, and irradiation time was changed. After gallium ion beam irradiation, bending angle of specimen was measured and observed a bent part of silicon by transmission electron microscope (TEM). Bending forward to gallium ion beam source was observed in both materials. Bending angle was in proportion to the irradiation time. Bending angle of single crystalline silicon was larger than that of DLC. When the diameter of specimen was larger, bending angle was smaller. When the beam current was larger, bending angle was also larger. From the experimental results, equation for estimation of bending angle was suggested. Bent part was observed by TEM and a change of the structure was confirmed.
Nano-forming Focused Ion Beam Single Crystalline Silicon Diamond Like Carbon
Masaaki OTSU Seigo SAKAI Mitsuhiro MATSUDA Yuji KAWAKAMI Kazuki TAKASHIMA
Dept.Materials Science and Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto, 860-8555, J Dept.Materials Science and Engineering, Kumamoto University, 2-39-1, Kurokami, Kumamoto, 860-8555, J Industrial Technology Center of Saga, 114, Yaemizo, Nabeshima, Saga, 849-0932, JAPAN
国际会议
2nd Asian Workshop on Macro/Nano Forming Technology(AWMFT-2009)(第2届亚洲微米纳米技术研讨会)
长沙
英文
587-589
2009-10-25（万方平台首次上网日期，不代表论文的发表时间）