Analysis of Power MOSFET Characteristics and Reliability in Parallel Operation
In order to attain low-voltage and high-current, a widely used solution is to parallel more MOSFETS. Adopted optimizing lead parameters in layout of circuit board and connecting a cascade compensation inductance to the source could greatly improve the performance and reliability of parallel MOSFETS. In this paper firstly proposed a practical power MOSFETS driving circuit with multi-drive capability. Use this circuit and 4 MOSFETS as simulation model. PSPICE circuit simulation tool is used to simulate the model. Secondly simulated and analyzed balance of dynamic current and reliability of parallel MOSFETS that is affected by decoupling resistance difference, lead inductance of gate, drain, source and optimization of these parameters, the results demonstrated loop inductance and parasitic inductance in power loop are the most important parameters that effect the dynamic current, by using proposed method we achieve 8 MOSFETS parallel connection and verified its practicability and reliability.
Power MOSFET Driver Circuit PSPICE Simulation Parallel Operation Reliability
Cui Yulong Shi Fengguang
School of Information Science & Technology, Beijing University of Chemical Technology, Beijing,China, 100029
国际会议
温州
英文
227-232
2009-10-18（万方平台首次上网日期，不代表论文的发表时间）