Improve the Reliability of the RF LDMOS
RF LDMOS (Radio Frequency Lateral diffusion metal oxide semiconductor) devices currently were widely applied in base station of GSM and CDMA. Its performance and reliability directly influences the transmission effect of the information. In this paper, based on study on the work principle, the test for the RF products is carried out. Based on the test results and other feedback information from scene, the reliability analysis is developed by use of the Six sigma methodology. The failure reasons of the RF devices are found out and the improvement measures are put forward to improve the reliability of the RF products.
RF Radio Frequency Sis Sigma Wire Bonding Reliability Analysis
Zhang Gang
Freescale Semiconductor (China) Ltd, Tianjin, 300385
国际会议
温州
英文
429-433
2009-10-18（万方平台首次上网日期，不代表论文的发表时间）