GIAXD and XPS study of 3C-SiC film prepared by EB-PVD

摘要：

3C-SiC film is deposited on stainless steel (SS) substrate at 800℃ by electron beam-physical vapor deposition (EB-PVD).The crystallization and composition of SiC film are studied by grazing incidence X-ray asymmetry diffraction (GIAXD).Surface chemical analysis of SiC film is carried out by X-ray photoelectron spectroscopy (XPS).The results of GIAXD and XPS analysis show that the film is not perfect and C-rich.

关键词： SiC GIAXD XPS C-rich

作者: Jian Yi Xiaodong He

作者单位: College of Mechanical Engineering,Taizhou University,Taizhou 318000,China Center for Composite Mater Center for Composite Materials,Harbin Institute of Technology,Harbin 150001,China

会议类型: 国际会议

会议名称: 国际断裂力学2009年会

会议地点: 成都

会议语种:英文

页码: 297-299

在线出版日期: 2009-10-16（万方平台首次上网日期，不代表论文的发表时间）