A New Integrated a-Si:H TFT Gate Driver with Q Node Quasi-Grounded

摘要：

This paper presents a new integrated hydrogenated amorphous silicon thin film transistor (a-Si:H TFT) gate driver. It features a discharge circuit which connects the gate electrode (Q-node) of the driving TFT to ground during the low level holding period in the output of the driver. Simulation results indicate that the proposed gate driver effectively suppresses the noise voltage. The proposed gate driver with three stage units is fabricated and measured. The results show that the proposed gate driver is highly stable.

关键词： Integrated a-Si gate driver Stability TFT-LCD

作者: Congwei Liaoa Changde He Yinan Liang Shengdong Zhang David Dai Smart Chung T.S.Jen

作者单位: Shenzhen Graduate School, Peking University, Shenzhen 518055, PRC Institute of Jiangsu (IVO) FPD Technology & Research,InfoVision Optoelectronics (Kunshan) Co., Ltd, Institute of Jiangsu (IVO) FPD Technology & Research, InfoVision Optoelectronics (Kunshan) Co., Ltd,

会议类型: 国际会议

会议名称: The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)

会议地点: 广州

会议语种:英文

页码: 55-58

在线出版日期: 2009-10-07（万方平台首次上网日期，不代表论文的发表时间）