Effect of the Spectral Properties of Backlight on the Photocurrent of a-Si:H Thin Film Transistor by using Spectrum Filters
A few white color spectrum filters were used in the measurement of the photocurrents in a hydrogenated amorphous silicon(a-Si:H) thin film transistor(TFT) and the experimental results were investigated and analyzed in terms of the relationship between the photoelectric properties of a-Si:H TFT and the spectral characteristics of cold cathode fluorescent lamp(CCFL) backlight. When the backlights were transmitted through the various white color spectrum filers and illuminated to the a-Si:H layers of TFT, it was possible to obtain lower or similar photo leakage current in spite of the higher luminance of the transmitted light and it was concluded that the photocurrent is related to the intensities at the lower wavelength of the transmitted light. The intensity peaks at the wavelength of about 400~500 nm (blue color) are thought to bring about mainly the absorption of light in a-Si:H layer and the generation of electron-hole pairs because the absorption coefficient of a-Si:H layer is reversely proportional to the wavelength of incident light and almost all the absorptions of light are carried out at lower wavelength than about 500～600 nm.
spectrum filters hydrogenated amorphous silicon thin film transistor(a-Si:H TFT) wavelength absorption coefficient
Kyung Min Choi Kyung Seo Jung Min Hyung Ahn Zhao Hui Li Eou Sik Cho Il Ho Kim Sang Jik Kwon
Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong,Soojung-gu, Seongna LMS Coperation, Anyang Megavalley 799 Gwanyang-dong, Dongan-gu, Anyang-si,Kyunggi-do 431-767, Korea Department of Electronics Engineering, Kyungwon University, San 65, Bokjung-dong, Soojung-gu, Seongn
国际会议
The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)
广州
英文
59-62
2009-10-07（万方平台首次上网日期，不代表论文的发表时间）