Inverse Pi cell driven by dual fringe field switching mode

摘要：

An inverse Pi cell driven by dual fringe field switching (FFS) is investigated. The FFS electrodes are made in bottom and top substrates, the potential field distributions induced by the dual FFS electrodes are simulated. The FFS effect is strong near the substrates and very weak in the middle LC layer as the width and gap of electrodes is suitable, even the FFS electrodes in botom and top substrate have the maximun error of the contrapposition. The liquid crysal (LC) molecules near the bottom and top substrates tilt to the same direction when the polyimides are parallelly rubbed. The angle of LC molecules in the middle LC layer has no change because of the weak electric field and the symmetric force induced by the LC deformations in the upper and lower half LC layers. The inverse Pi cell shows very good dark state and fast response time.

关键词： Inverse Pi cell dual fringe field switching conductive spacer

作者: Yubao Sun Hoi Sing Kwok Guangsheng Fu

作者单位: Department of Applied Physics, Hebei University of Technology, 300401, Tianjin,Peoples Republic of C Center for Display Research, Department of Electronic and Computer Engineering, Hong Kong University School of Information Engineer, Hebei University of Technology, 300401, Tianjin, Peoples Republic of

会议类型: 国际会议

会议名称: The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)

会议地点: 广州

会议语种:英文

页码: 138-140

在线出版日期: 2009-10-07（万方平台首次上网日期，不代表论文的发表时间）