OLEDs with MoO3/Al/MoO3 as anodes
Dielectric/metal/dielectric films with high transparency and low resistance have been reported as electrode for OLEDs in the recent years. Here, we report OLEDs with MoO3 (40 nm)/Al (12 nm)/MoO3 (40 nm) (MAM) film as the anode. The MAM films prepared by vacuum thermal evaporation on soda lime glass substrates show a sheet resistance of around 30 Ω/□ and an optical transmittance of around 60％ in the visible region, while the ITO (40 nm), with a sheet resistance of around 50 Ω / □ and an optical transmittance of above 80％ in the visible region, were used for comparison in this study. The OLEDs with structure of anode/NPB (40 nm)/Alq3 (60 nm)/LiF (1 nm)/Al (100 nm) were fabricated by successive deposition of organic layers and cathode on MAM or ITO anodes by vacuum thermal evaporation. The OLEDs with MAM anode exhibit lower driving voltage and higher luminance compared to the OLEDs with ITO anode, which may result from improved hole injection of MAM anode for lower sheet resistance and high work function of MoO3. The EL efficiency of the OLEDs with MAM anode is about 60％ compared with that of the OLEDs with ITO anode, which mainly due to the lower transparency of the MAM and unbalance carriers injection.
OLEDs dielectric/metal/dielectric (DMD) MoO3/Al/MoO3 (MAM)
Aiguo Tu Xiang Zhou
State Key Lab of Optoelectronic Materials and Technologies,Sun Yat-Sen University, Guangzhou, 510275 State Key Lab of Optoelectronic Materials and Technologies, Sun Yat-Sen University, Guangzhou, 51027
国际会议
The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)
广州
英文
248-250
2009-10-07（万方平台首次上网日期，不代表论文的发表时间）