A Leakage Current Model for Poly-Si TFTs Considering the Influence of Lateral Electric Field

摘要：

The generation rate is simulated considering electric field enhanced emission generation with Poole-Frenkel effect to model the leakage current in polycrystalline thin film transistors. The simulated result shows that the deep states near midgap ±0.05 eV are devoted to generation rate, and the band tail states can be ignored. Higher drain voltage brings out higher leakage current at the same drain gate voltage, and the influence of lateral electric field to leakage current is involved in the proposed model. The voltage and temperature dependence of leakage current is studied. The simulated results provide good agreement with the available experiment data.

关键词： Key Words: Polycrystalline Thin Film Transistors Modeling Leakage Current Thermal Field Emission

作者: Hongyu He Xueren Zheng Wenniu Xie Changhe Wei

作者单位: Institute of Microelectronics, School of Electronic and Information Engineering, South China Univers Institute of Microelectronics, School of Electronic and Information Engineering, South China Univers

会议类型: 国际会议

会议名称: The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)

会议地点: 广州

会议语种:英文

页码: 270-273

在线出版日期: 2009-10-07（万方平台首次上网日期，不代表论文的发表时间）