Reactive Sputtered Deposition and Etched Patterning of ZnO Films for Active Matriz Flat Panel Display (AM FPD)

摘要：

Deposition of ZnO films by reactive RF sputtering with metal target and patterning of the films by both wet and dry etching were investigated. The as-deposited ZnO films show a much different dependence of resistivity on pO2 from those using zinc oxide targets. For the as-deposited ZnO films, the wet etching rate in general decreases as the resistivity of the films increases. For the annealed films, the increase in the wet etching rate gets saturated with high annealing temperature. In dry etching case, the selective ratios of the ZnO to SiO2 and Si3N4 films are ～1:46 and ～1:50, respectively. We also present the influence of Ar plasma and O2 plasma treatments on ZnO films.

关键词： reactive RF sputtering wet etching dry etching plasma treatments

作者: Shao-Juan Li Yi Wang Lei Sun Ru-Qi Han Shengdong Zhang

作者单位: Institute of Microelectronics, Peking University, Beijing 100871, PRC Shenzhen Graduate School, Peking University, Shenzhen 518055, PRC

会议类型: 国际会议

会议名称: The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)

会议地点: 广州

会议语种:英文

页码: 286-289

在线出版日期: 2009-10-07（万方平台首次上网日期，不代表论文的发表时间）