Effects of doping concentration on the properties of Ga-doped ZnO Transparent conductive film by RF magnetron sputtering
Gallium-doped zinc oxide (GZO) transparent conductive thin films were deposited on glass substrate by RF magnetron sputtering using ceramic ZnO target doped with 3, 5 and 10 wt％ Ga2O3. The effects of doping concentration on structural, electrical and optical properties of the GZO films were investigated. X-ray diffraction (XRD) measurements indicate that GZO films were polycrystalline and strongly c-axis oriented. The electrical resistivity decreases with the increase of the doping concentration and the lowest resistivity obtained was 3.06×10-4 Ω ·cm at doping concentration of 10 wt％. With the increase of the doping concentration, the carrier concentration increased and hall mobility began to decrease after reaching the maximum value. The average transmittance in visible spectra was over 90％.
RF sputtering Gallium-doped zinc ozide Doping concentration Properties
Shufang Wang Xifeng Li Jianhua Zhang
Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai Universi Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai Universi Key Laboratory of Advanced Display and System Applications, Ministry of Education, Shanghai Universi
国际会议
The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)
广州
英文
290-293
2009-10-07（万方平台首次上网日期，不代表论文的发表时间）