We produced targets with various ratio of MgF2 to Zn (5 : 5, 4 : 6 and 3 : 7) to control the amount of Zn in passivation film. Mg-Zn-F films were deposited on the flexible poly-ethylenenaphthalate (PEN) substrate by RF magnetron sputtering technique). The thickness and optical transmittance of deposited passivation films were approximately 200 nm and 90 ％, respectively. Zn was located in the gap between the lattices of MgF2 without chemical bonding in the Mg-Zn-F film. Electron dispersive spectroscopy (EDS) analysis verified that the Zn content in the film sputtered with 4 : 6 ratio target was 9.84 wt％. Zn contents in the films made from 5 : 5, 3 : 7 ratio targets were 2.07 and 5.01 wt％, respectively. The water vapor transmission rate (WVTR) was measured at 38 , RH 90 ℃ ～100％. WVTR of the Mg-Zn-F film which was deposited with 4 : 6 ratio target nearly reached the limitation of the equipment, 1 × 10-3 g/(m2·day). The polymer light emitting diode (PLED) was fabricated with and without passivation of various ratio of Zn. As a result of the life time measurement for PLED, it can be found that the life time of device with passivation film which was deposited with 4 : 6 target increases by approximately 4 times.
flezible display organic light emitting diode (OLED) thin film passivation
Sung-Youp Lee Do-Eok Kim Byong-Wook Shin Byoung-Ho Kang Seok-Min Hong Myeong-Rak Son Shin-Won Kang Hyeong-Rag Lee
Department of Nano-Science and Technology, Kyungpook National University, Daegu, Korea School of Electrical Engineering and Computer Science, Kyungpook National University,Daegu, Korea Department of Physics, Kyungpook National University, Daegu, Korea Department of Sensor and Display Engineering, Kyungpook National University, Daegu,Korea Department of Nano-Science and Technology, Kyungpook National University, Daegu, Korea Department of