A Driving Circuit Scheme for Field Emission Display Devices

摘要：

A driving circuit scheme for field emission display (FED) devices with high voltage was presented. The negative voltage driving chip is employed in the cathode driver circuit, and the positive voltage driving chip in the gate driver circuit, where can increase the output driving voltage amplitude. By using HV4622 for realizing the cathode driver and HV7620 for the gate driver, the maximum output driving voltage of 400 V is obtained. The performance of the driving circuits are tested by driving the FED device with resolution of 120×3×68, and the results shows that the driving circuit can meet the requirements of the high voltage devices.

关键词： ASID09 FED high voltage devices driving circuit negative voltage driving IC

作者: Da Liang Liang Shaozhi Deng Jun Chen Ningsheng Xu

作者单位: State Key Laboratory of Optoelectronic Materials and Technologies, and Guangdong Province Key Laboratory for Display Material and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou, 510275, P.R.China

会议类型: 国际会议

会议名称: The 11th Asian Symposium on Information Display(ASID09)(第11届亚洲信息显示会议)

会议地点: 广州

会议语种:英文

页码: 309-311

在线出版日期: 2009-10-07（万方平台首次上网日期，不代表论文的发表时间）