Effect of Si and Its Ozide Particle Sizes and Fabrication Process on Photoluminescence of Si/Si Ozide Ceramic Sintered Body

摘要：

Silicon light emission has been studied intensely due to its attractive prospect in microelectronics application. In this article, the effect of silicon/silicon oxide particle sizes, silicon content and fabrication process on room-temperature photoluminescence of their laser sintering, air and vacuum furnace sintering samples were studied. Room-temperature photoluminescence (PL) has been observed from silicon/silicon dioxide laser sintered body with its strongest photoluminescence intensity peak being at 387 nm (3.20 eV) and another peaked near 765 nm (1.62 eV). It was found that the PL peak intensities and peak positions swing with the increasing Si content.

关键词： Photoluminescence Laser Sinter Silicon Silicon ozide

作者: Huo Liang Zhou Yongheng Liao Changjun Zeng Qun Zhang Qingmao Liu Songhao

作者单位: Laboratory of Laser Processing Technology School of Information photon electrical Science and Technology, South China Normal University, China South China Normal University Guangzhou Higher Education Mega Center, Guangdong, China 510006

会议类型: 国际会议

会议名称: The 8th International Coference on Measurement and Control of GranularMaterials(第八届国际粉体检测与控制学术会议)(MCGM 2009)

会议地点: 沈阳

会议语种:英文

页码: 233-236

在线出版日期: 2009-08-27（万方平台首次上网日期，不代表论文的发表时间）