Study Of Stress in TiO2 films grown by electron-beam evaporation
TiO2 films were fabricated on Si substrate by using electron-beam gun evaporation. Influence of deposition rate, deposition temperature and ion beam bombarding on stress in TiO2 films was studied by AFM and XRD. The results show that deposition temperature of 423K and deposition rate of 0.2nm/s, the average stress in TiO2 thin films is less than 48.2MPa. The average stress decreases to compressive stress of 16.7MPa from tensile stress of 72.9MPa by the ion beam energy of 113eV and bombarding time of 300s. The microstructure change of TiO2 films is main factors of stress development.
Thin film TiO2 Ion beam bombarding Tensile stress Compress stress
CHEN Tao LUO Chong-tai WANG Duo-shu XIONG Yu-qing
National Key Lab.of Surface Engineering, Lanzhou Institute of Physics, Lanzhou 730000, China
国际会议
沈阳
英文
195-200
2009-08-24（万方平台首次上网日期，不代表论文的发表时间）