Effect of PbTe Quantum Dots on Electrical Performances of Bi2Te3 Thermoelectric Films
Magnetron sputtering method was introduced to fabricate Bi2Te3-PbTe nanocomposite films. When PbTe sputtering time is lsec, PbTe nano-particles are about 2~5nm and distribute in the Bi2Te3 films dispersedly without contact Bi2Te3 is amorphous in the as grown films and crystallizes under 300℃ and 3 hours without affecting PbTe nano-particles. Anneal can relax the lattice stress of the films that increases Seebeck coefficients more man decreasing the conductivity. With the increasing temperature, PbTe nano-particles introduced into Bi2Te3 films can increase Seebeck coefficients more than decreasing the conductivity when the PbTe nano-particles are small enough. That yields an increasing in power factor, with a goal helping to increase ZT.
Bi2Te3 PbTe Quantum dots Film
MU Wu-di CHENG Hai-feng TANG Geng-ping
Key Lab of CFC, National University of Defense Technology, Changsha, 410073
国际会议
沈阳
英文
237-242
2009-08-24（万方平台首次上网日期，不代表论文的发表时间）