Numerical Study on the Mizing Effects of double-layer Target Irradiated by high-intensity Pulsed ion Beam
Monte Carlo method was used to simulate the interaction between ions and Ti film Al substrate double-layer target system. While the high-intensity pulsed ion beam (HIPIB) interacts with target materials, the deposited energy of HIPIB in the materials made the surface temperature arising rapidly, and meanwhile the high energy ions implanted into the target made cross mixing among the atoms of double-layer target at the film and substrate interface. The energy of ions deposits in some range and shows certain profile. The shooting ions and the energy distribution influence the process of melting or vaporization of target materials. This may change the adhesion of interface between the film and substrate. As results, the evolution of energy distribution of the HIPIB in the double-layer target and the effects to the mixing region by the high energy shooting ions were obtained according to the calculation. The cascade collision mixing is not the main process to the mixing of the double-layer target by HIPIB irradiation, and the most preferable ion current densities to obtain the better adhesion effect lie in the range of 100A/cm2～150A/cm2 based on the simulation.
High-intensity pulsed ion beam double-layer target mizing numerical methods
WU Di ZHANG Jian-hong WANG Jing LEI Ming-kai GONG Ye
College of Physical Science and Technology, Dalian University, Dalian 116622, China Laboratory of Materials Modification by Laser, Ion and Electron Beams, Dalian University of Technolo
国际会议
沈阳
英文
243-247
2009-08-24（万方平台首次上网日期，不代表论文的发表时间）