Residual Stress reduction of c-BN Films with one BNz Interlayer Deposited by RF Magnetron Sputtering
Cubic boron nitride(c-BN) films is deposited on a HSS substrate implanted with nitrogen and boron by RF-magnetron sputtering. And the influence of the BNx implanted buffer layer on growth and residual stress of c-BN films are mainly investigated. The c-BN films and implanted layer are analyzed by Bending Beam Method, Scratch test, XPS, FTTR and AFM. The experiment results show that the BNx implanted interlayer can reduce the residual stress obviously. When the N/B ratio reaches 1, the chemical composition of buffer interlayer was mainly in BN phase, the residual stress of c-BN films reached the least value of 3.0GPa. And AFM show that the surface of the c-BN film on the BNx implanted layer is low in roughness and small in grain size.
Cubic boron nitride film HSS Ion implantation Residual stress
CAI Zhi-hai ZHANG Ping ZHAO Jun-jun DU Jun
National Key Laboratory for Remanufacturing, Academy of Armored Force Engineering, Beijing 100072, China
国际会议
沈阳
英文
292-296
2009-08-24（万方平台首次上网日期，不代表论文的发表时间）