Use a Theoretical Model to Investigate Reactive Sputtering of AlN Thin Films
In order to understand the physical and chemical processes of aluminium nitride thin films preparated by reactive sputtering, a reactive sputtering model model was developed. The mode of controlled cathode volatge at constant flow rates are investigated for the purpose of controlling the stoichimetry of AlN films. The mode is shown to provide a means for stable operation for any degree of target coverage.
Reactive sputtering AlN thin films Model Stoichimetry
TONG Hong-bo LIU Qing
School of Mechanical Engineering, Liaoning Shihua University, Fushun, 113001, China
国际会议
沈阳
英文
297-300
2009-08-24（万方平台首次上网日期，不代表论文的发表时间）