Preparation of high-purity Indium by Vacuum Instillation

摘要：

In this paper, a theoretical analysis was applied to analyze the possibility of preparation of high-purity indium by vacuum instillation. The relationship of distillation temperature, distillation time, metal evaporation rate and elimination the mixed effect have been discussed. The best conditions of Vacuum distillation purifying indium were as follows: vacuum for 10 ～ 20Pa, distillation temperature for 950 ℃, distillation time for 120min. At this time volatile of indium was only 36.6 percent rate and the rate of removal of thallium was more than 99％.

关键词： indium purity indium high-purity indium vacuum instillation

作者: DENG Yong YANG Bin LIU Da-chun XU Bao-qiang FENG Tong-chun

作者单位: The national engineering laboratory of the vacuum metallurgy of Kunming university of science and te Yunnan Province Key Laboratory of Non-ferrous Vacuum Metallurgy, Kunming 650093, china Mamu NiCo Management(MCC) Limited, 100013, china

会议类型: 国际会议

会议名称: 第九届真空冶金与表面工程学术会议

会议地点: 沈阳

会议语种:英文

页码: 384-389

在线出版日期: 2009-08-24（万方平台首次上网日期，不代表论文的发表时间）